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Inherent memory effect in a SrS:Ce,K blue‐emitting electroluminescent thin‐film device

 

作者: Shosaku Tanaka,   Hideki Yoshiyama,   Yoshiro Mikami,   Junichi Nishiura,   Shozo Ohshio,   Hiroshi Deguchi,   Hiroshi Kobayashi,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 50, issue 3  

页码: 119-120

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.97689

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The luminance‐applied voltage hysteresis characteristic, so‐called memory effect, has been found in the SrS:Ce,K blue‐emitting electroluminescent thin‐film device. The hysteresis voltage width is about 38 V with 1 kHz pulse drive. The origin of the memory effect is attributable to native defects of the SrS phosphors.

 

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