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Buried heterostructure laser diodes fabricated usingin situprocessing

 

作者: M. Hong,   D. Vakhshoori,   L. H. Grober,   J. P. Mannaerts,   M. T. Asom,   J. D. Wynn,   F. A. Thiel,   R. S. Freund,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 2  

页码: 1258-1261

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587016

 

出版商: American Vacuum Society

 

关键词: LASER DIODES;BURIED HETEROSTRUCTURES;FABRICATION;TERNARY COMPOUNDS;GALLIUM ARSENIDES;INDIUM ARSENIDES;ALUMINIUM ARSENIDES;MOLECULAR BEAM EPITAXY;THRESHOLD CURRENT;THRESHOLD VOLTAGE;PLASMA SOURCES;GaAs;(In,Ga)As;AlAs

 

数据来源: AIP

 

摘要:

Aninsituprocess which includes electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth is applied to the fabrication of buried heterostructure vertical cavity surface‐emitting laser (SEL) diodes and edge‐emitting laser (EEL) diodes. The buried SEL with a 7.5 μm diameter has a pulsed laser threshold current of 1 mA, and a threshold voltage of 4 V with a peak power of 0.9 mW. The buried EEL with 2.5 μm stripe width and 800 μm cavity length has a threshold current density of 500 A/cm2.

 

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