A new stripe geometry for cw GaInAsP‐InP layers is presented. The laser consists of a stripe contact defined on the In0.53Ga0.47As cap layer of a conventional double heterostructure. It is surrounded by two lateral‐reverse‐biased Schottky diodes fabricated onto thep‐type confinement layer. These lasers have a threshold curent of 100 mA for 320‐&mgr;m‐long and 20‐&mgr;m‐wide stripes and operate in the zero‐order transverse mode.