An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements
作者:
C. H. Ling,
Z. Y. Cheng,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 22
页码: 3218-3220
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120295
出版商: AIP
数据来源: AIP
摘要:
Dominant trap energy levels in silicon are extracted from the temperature dependence of minority carrier recombination lifetime, observed through laser microwave photoconductive decay. A small correction is made to the Arrhenius plot by incorporating the weakly temperature-dependent term in the recombination lifetime expression, hitherto ignored. The new extraction technique is simple to implement and the results are in good agreement with published data. ©1997 American Institute of Physics.
点击下载:
PDF
(80KB)
返 回