We report the demonstration of resonant tunneling of holes through an AlAs/GaAs0.7P0.3double-barrier heterostructure. The tensile strain in the quantum well is large enough to reverse the order of the light- and heavy-hole levels (the first light-hole level is the ground state). TheI(V)characteristic of this structure is measured and compared to a standard AlAs/GaAs unstrained one. As expected, the peak current density of the first light-hole resonance and its peak-to-valley current ratio are enhanced (they reach 28A/cm2and 3.4:1 at 15 K). Negative differential resistance is observed up to 250 K. ©1997 American Institute of Physics.