Growth of GaP Crystals andp‐nJunctions by a Traveling Solvent Method
作者:
Martin Weinstein,
A. I. Mlavsky,
期刊:
Journal of Applied Physics
(AIP Available online 1964)
卷期:
Volume 35,
issue 6
页码: 1892-1894
ISSN:0021-8979
年代: 1964
DOI:10.1063/1.1713764
出版商: AIP
数据来源: AIP
摘要:
A traveling solvent method has been used to grow GaP crystals from Ga solution. Growth rates of approximately 0.5 mm/h have been achieved at an average temperature as low as 850°C, from Ga zones 0.025 mm thick. Polycrystalline growth, 10 mm in diameter and 2 mm thick, has been achieved as a direct continuation of the crystal orientations in polycrystalline seeds.p‐njunction structures have been grown by doping from a 2% Ge‐Ga solvent zone. Some electrical characteristics of small diodes cut from polycrystalline crystals are described.
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