The influence of electron‐electron scattering on mobility in GaAs is studied over the temperature range 80–300 K using the variation principle. The mobilities limited by both polar optic and ionized impurity scattering are reduced more significantly due to electron‐electron scattering than those limited by deformation potential acoustic and by piezoelectric scattering. For a carrier concentration of 1016cm−3, the overall mobility is reduced by about 10% at 80 K.