Deep defect states inp‐type silicon crystals induced by plastic deformation at 750 °C are investigated by means of deep level transient spectroscopy. Several kinds of hole traps having different energy levels within the band gap are introduced simultaneously by deformation. The main three are denoted DH(0.24), DH(0.33), and DH(0.56). The hole concentration versus temperature relations in plastically deformedp‐type silicon crystals measured in a previous paper are interpreted in terms of the defect levels found in this work. Annealing behaviors of the defect states are followed and are compared with those induced by electron irradiation. DH(0.33) is proposed to be due to jogs and kinks while DH(0.24) and DH(0.56) to agglomerations of point defects that result from dislocation debris.