Uniformity and physical properties of semi-insulating Fe-doped InP after wafer or ingot annealing
作者:
M. Avella,
J. Jime´nez,
A. Alvarez,
R. Fornari,
E. Gilioli,
A. Sentiri,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 8
页码: 3836-3845
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365748
出版商: AIP
数据来源: AIP
摘要:
Semi-insulating Fe-doped InP was annealed under different conditions and investigated by Hall effect, extrinsic photocurrent mapping, chemical etching, and optical microscopy. The resistivity is increased for any treatment, particularly in wafer-annealed InP. This result is probably due to strong losses of shallow donors. Remarkable differences exist between the structural properties of the wafer and ingot annealed material; wafer annealing produces a quick elimination of growth striations and decoration microdefects while ingot-annealed InP still retain these microdefects, both along dislocations and in the matrix. The photocurrent maps indicate that the thermal treatments normally improve the doping uniformity (especially the short-range fluctuations). The best uniformity is achieved for the long annealing time(⩾50 h),while a slow cooling rate improves the mobility. ©1997 American Institute of Physics.
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