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Electronic and optical properties of (001) Si/ZnS heterostructures

 

作者: L. C. Lew Yan Voon,   L. R. Ram-Mohan,   R. A. Soref,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 70, issue 14  

页码: 1837-1839

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.118707

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A theoretical characterization of (001)-grown(Si2)m/(ZnS)2mmultiple quantum wells is presented. Confined states in the&Ggr;1cwell have strongX1cand light-hole admixtures, and there are two types of hole states in the valence band. Strong intersubband transitions can be exploited in the infrared for bothn- andp-doped devices. ©1997 American Institute of Physics.

 

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