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Domain structure of epitaxialSrRuO3thin films on miscut (001)SrTiO3substrates

 

作者: J. C. Jiang,   W. Tian,   X. Q. Pan,   Q. Gan,   C. B. Eom,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 72, issue 23  

页码: 2963-2965

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121508

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The microstructure of epitaxialSrRuO3thin films grown on vicinal (001)SrTiO3substrates with miscut angle of 1.9° and miscut direction of 12° away from [100] direction was studied using transmission electron microscopy (TEM). Cross-section as well as plan-view TEM studies revealed that these films are single domain with the in-plane epitaxial orientation relationship ofSrRuO3[001]//SrTiO3[010]andSrRuO3[1¯10]//SrTiO3[100].This result is in contrast to the previous studies of theSrRuO3thin films grown on exactly (001)SrTiO3,which are composed of two types of [110] domains with nearly the same volume fraction. The occurrence of these different domain structures is attributed to the step-flow growth of the film on the substrate surface due to the miscut. ©1998 American Institute of Physics.

 

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