Auger generation suppression in narrow‐gap semiconductors using the magnetoconcentration effect
作者:
Zoran Djuric´,
Zoran Jaksˇic´,
Aleksandar Vujanic´,
J. Piotrowski,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 71,
issue 11
页码: 5706-5708
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.350505
出版商: AIP
数据来源: AIP
摘要:
A method is presented for the Auger generation suppression in narrow‐gap semiconductors using the magnetoconcentration effect for the case when all the generation‐recombination mechanisms (Auger, radiative, and Shockley–Read) are taken into account. A numerical solution is given for the kinetic equation determining carrier concentration distribution in a thin semiconductor slab placed in an electric and a magnetic field. The results of the numerical calculation show that the Auger generation suppression becomes very efficient when the concentration of Shockley–Read recombination centers is small enough.
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