Deep level hole‐(Ev+0.39 eV) and electron‐trapping (Ec−0.34 eV) centers associated with oxygen ion implanted at 1 MeV (1014ions cm−2) have been detected in Schottky barrier germanium diodes by deep level transient spectroscopy, following thermal anneals under molecular hydrogen. No traps were present after heating under atomic hydrogen from a radiofrequency induced plasma, indicating passivation by hydrogenation. Drift of the peaked, electron trap distribution formed at the projected ion range was observed across the depletion layer of a reverse biased Schottky diode with an average mobility of 5.5±1×10−15cm2 V−1 s−1at 25 °C.