With semiconductor compounds of the group III–V and in particular GaAs, energy band structure investigations have been carried out by several researchers by effecting, in particular, Hall effect measurements under hydrostatic pressure. Their results allow one to conclude that the energy gap increase which occurs with increasing pressure up to a transition point of up to approximately 33 kbar, leads the semiconductor Hall sensitivity to increase correspondingly with applied pressure. Thus, commercialn‐type GaAs Hall elements can effectively be used as pressure sensors, and subsequently, if appropriate calibration of the output Hall voltage to corresponding values of pressure is carried out, as pressure transducers. ©1995 American Institute of Physics.