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Comment on “Schottky contact and thermal stability of Ni onn-typeGaN” [J. Appl. Phys.80, 1623 (1996)]

 

作者: K. J. Duxstad,   E. E. Haller,  

 

期刊: Journal of Applied Physics  (AIP Available online 1997)
卷期: Volume 82, issue 1  

页码: 491-492

 

ISSN:0021-8979

 

年代: 1997

 

DOI:10.1063/1.365845

 

出版商: AIP

 

数据来源: AIP

 

摘要:

J. D. Guo &etal; [J. Appl. Phys.80, 1623 (1996)] have studied the thermal stability of Ni on GaN and have deduced by x-ray diffraction measurements that new phases form at the interface between Ni and GaN. This determination, based solely on x-ray diffraction data, is ambiguous, as the peaks assigned to theGa4Ni3and Ni–N phases can also be attributed to substrate related x-ray peaks. ©1997 American Institute of Physics.

 

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