Comment on “Schottky contact and thermal stability of Ni onn-typeGaN” [J. Appl. Phys.80, 1623 (1996)]
作者:
K. J. Duxstad,
E. E. Haller,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 1
页码: 491-492
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365845
出版商: AIP
数据来源: AIP
摘要:
J. D. Guo &etal; [J. Appl. Phys.80, 1623 (1996)] have studied the thermal stability of Ni on GaN and have deduced by x-ray diffraction measurements that new phases form at the interface between Ni and GaN. This determination, based solely on x-ray diffraction data, is ambiguous, as the peaks assigned to theGa4Ni3and Ni–N phases can also be attributed to substrate related x-ray peaks. ©1997 American Institute of Physics.
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