Low field mobility and thermopower in one‐dimensional electron gas
作者:
S. Kundu,
C. K. Sarkar,
P. K. Basu,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 3
页码: 1070-1074
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346746
出版商: AIP
数据来源: AIP
摘要:
A scattering theory of one‐dimensional electron gas formed in a narrow channel GaAs‐AlGaAs high electron mobility transistor has been developed. The mobility values for the different scattering mechanisms have been computed and their variation with temperature has been presented. The various scattering processes include acoustic phonon scattering for both deformation potential and piezoelectric scattering mechanisms, impurity scattering, and surface roughness scattering at lower temperatures and polar optic phonon scattering at higher temperatures. The effect of dynamic screening has also been included. Finally, the temperature variation of thermopower for different 1D electron concentrations has been shown and attempts have been made to interpret the results obtained.
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