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High growth rate of III–V compounds by free carrier gas chemical beam epitaxy

 

作者: J. L. Benchimol,   M. Juhel,   M. Petitjean,   A. Ancilotti,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 1  

页码: 55-58

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.587985

 

出版商: American Vacuum Society

 

关键词: III−V SEMICONDUCTORS;GALLIUM ARSENIDES;EPITAXY;GROWTH RATE;ORGANOMETALLIC COMPOUNDS;CRYSTAL DEFECTS;SURFACE STRUCTURE;CRYSTAL STRUCTURE;XRD;HALL EFFECT;GaAs

 

数据来源: AIP

 

摘要:

We present in this article a simple and economic gas line designed for low vapor pressure metalorganic sources introduced into a chemical beam epitaxy chamber without carrier gas. This gas line was tested with triethylgallium and trimethylindium for the growth of GaAs and InP layers. The high conductance of the line allowed minimizing the heating of the source and reaching growth rate as high as 12 μm/h for GaAs. The lower InP growth rate was attributed to the higher viscosity of trimethylindium compared to triethylgallium.

 

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