A method for growing single‐crystal Mg2Pb is described. A Bridgman method is used, starting with anonstoichiometricmelt (<31.3 at.% Pb). This requirement follows from the recent discovery that Mg2Pb is not congruently melting but forms from a peritectic reaction. The usefulness of an x‐ray microprobe for the analysis of crystal growing problems is demonstrated by a study of eutectic inclusions observed in some Mg2Pb ingots. Measurements are reported of the angular dependence of the magnetoresistance and the magnetic field dependence of the Hall coefficient in fields up to 5200 G and at temperatures of 4.2° and 77°K. The phenomenological coefficients,b, c, andd, determined from the angular dependence of the magnetoresistance show strong field dependence at 4.2°K and obey the symmetry condition for [100] oriented many valley ellipsoids at all fields and temperatures. The Hall coefficient exhibits a strong field dependence, similar top‐type Ge, which has been fitted by a simple model consisting of two spherical bands. The mobilities and carrier densities obtained by fitting the data from several well‐annealed samples to the two‐band model are &mgr;1≥7×104cm2/V·sec,n1≃7×1017holes/cm3, &mgr;2≃3×103cm2/V·sec,n2≃4×1020holes/cm3at 4.2° K.