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Short pulse electron beam excitation of the high‐pressure atomic Ne laser

 

作者: Jong W. Shon,   Robert L. Rhoades,   Joseph T. Verdeyen,   Mark J. Kushner,  

 

期刊: Journal of Applied Physics  (AIP Available online 1993)
卷期: Volume 73, issue 12  

页码: 8059-8065

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.353921

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The high‐pressure atomic Ne laser operates on four visible transitions between the 3pand 3smanifolds. Oscillation at 585 nm (3p’[1/2]0→3s’[1/2]10) at efficiencies of ≳1% have been demonstrated by others. The upper laser level is believed to be populated by dissociative recombination of Ne2+, while state‐selective Penning reactions relax the lower laser levels. To investigate these pumping mechanisms, experimental and modeling studies have been performed on a short pulsee‐beam excited Ne laser using He/Ne/Ar mixtures. We found that the electron temperature in the afterglow following thee‐beam pulse largely determines the time at which oscillation starts. The electron temperature during the afterglow is partly controlled by a slow relaxation of excited states in Ar. Laser oscillation does not occur until these manifolds are depleted and the electron temperature decreases, thereby increasing the rate of dissociative recombination.

 

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