Short pulse electron beam excitation of the high‐pressure atomic Ne laser
作者:
Jong W. Shon,
Robert L. Rhoades,
Joseph T. Verdeyen,
Mark J. Kushner,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 73,
issue 12
页码: 8059-8065
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.353921
出版商: AIP
数据来源: AIP
摘要:
The high‐pressure atomic Ne laser operates on four visible transitions between the 3pand 3smanifolds. Oscillation at 585 nm (3p’[1/2]0→3s’[1/2]10) at efficiencies of ≳1% have been demonstrated by others. The upper laser level is believed to be populated by dissociative recombination of Ne2+, while state‐selective Penning reactions relax the lower laser levels. To investigate these pumping mechanisms, experimental and modeling studies have been performed on a short pulsee‐beam excited Ne laser using He/Ne/Ar mixtures. We found that the electron temperature in the afterglow following thee‐beam pulse largely determines the time at which oscillation starts. The electron temperature during the afterglow is partly controlled by a slow relaxation of excited states in Ar. Laser oscillation does not occur until these manifolds are depleted and the electron temperature decreases, thereby increasing the rate of dissociative recombination.
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