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Preferential propagation of pores during the formation of porous silicon: A transmission electron microscopy study

 

作者: S.‐F. Chuang,   S. D. Collins,   R. L. Smith,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 55, issue 7  

页码: 675-677

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101819

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A transmission electron microscopy study of porous silicon reveals that pores selectively propagate in the ⟨100⟩ crystallographic directions on bothn‐ andp‐type silicon, independent of dopant concentration or anodization conditions.

 

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