A tight‐binding calculation of a Si film with nanometer dimensions is presented. We study the electron energy structure and the wave functions of a pristine Si‐quantum film and one covered with hydrogen. A total energy minimization method, in the framework of self‐consistent tight‐binding theory, is used to investigate the reconstruction of the Si‐surface after the adsorption of hydrogen. The dependence of the electron energy spectrum on the film thickness and the atomic structure of the surface is studied. ©1995 American Institute of Physics.