Digital chemical vapor deposition of SiO2
作者:
M. Nakano,
H. Sakaue,
H. Kawamoto,
A. Nagata,
M. Hirose,
Y. Horiike,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 11
页码: 1096-1098
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.104284
出版商: AIP
数据来源: AIP
摘要:
The repetitive cycles of a few monolayers hydrogenated silicon deposition and its oxidation has been employed for the growth of SiO2. The surface reaction is promoted by an alternate irradiation of silicon hydride radical beam produced by the upstream pulsed microwave discharge of SiH4and discharged oxygen beam. The deposition rate is controlled by the flow velocity of silane gas jet and substrate temperature. It is shown that the deposition species ejected with supersonic velocity into a high vacuum reactor conformably fills the SiO2film into a deep Si trench.
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