Influence of Conductivity Gradients on Galvanomagnetic Effects in Semiconductors
作者:
R. T. Bate,
A. C. Beer,
期刊:
Journal of Applied Physics
(AIP Available online 1961)
卷期:
Volume 32,
issue 5
页码: 800-805
ISSN:0021-8979
年代: 1961
DOI:10.1063/1.1736109
出版商: AIP
数据来源: AIP
摘要:
An approximate solution is found of a boundary‐value problem arising from the continuity equation in an inhomogeneous semiconductor, leading to rotational current vectors. Results are used to predict the effect of carrier‐concentration gradients on magnetoresistance. The predicted weak‐field effects are especially significant in degenerate semiconductors andn‐type III–V intermetallics where the ``intrinsic'' magnetoresistance is small. In strong fields, even small gradients in carrier concentration can completely alter the field dependence of the magnetoresistance. Experimental results indicate that transverse currents, which do not occur in the simple case discussed, do appear in general, and further perturb the magnetoresistance. The influence of inhomogeneous magnetic fields is discussed briefly.
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