The theory of recoil implantation
作者:
R.S. Nelson,
期刊:
Radiation Effects
(Taylor Available online 1969)
卷期:
Volume 2,
issue 1
页码: 47-50
ISSN:0033-7579
年代: 1969
DOI:10.1080/00337576908235579
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The basic physical principles underlying the technique of recoil implantation are discussed in some detail. The number of recoils as a function of recoil energy passing from an evaporated layer into the substrate is calculated for a particular case; and the final penetration distribution within the substrate is compared with that expected for a direct implantation. The number and distribution of unwanted contaminant impurities which inevitably recoil into the substrate during direct implantation through an oxide layer, is also discussed.
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