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The theory of recoil implantation

 

作者: R.S. Nelson,  

 

期刊: Radiation Effects  (Taylor Available online 1969)
卷期: Volume 2, issue 1  

页码: 47-50

 

ISSN:0033-7579

 

年代: 1969

 

DOI:10.1080/00337576908235579

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The basic physical principles underlying the technique of recoil implantation are discussed in some detail. The number of recoils as a function of recoil energy passing from an evaporated layer into the substrate is calculated for a particular case; and the final penetration distribution within the substrate is compared with that expected for a direct implantation. The number and distribution of unwanted contaminant impurities which inevitably recoil into the substrate during direct implantation through an oxide layer, is also discussed.

 

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