Correlation between material properties of ferroelectric thin films and design parameters for microwave device applications: Modeling examples and experimental verification
作者:
FelixA. Miranda,
FredW. Van Keuls,
Guru Subramanyam,
CarlH. Mueller,
RobertR. Romanofsky,
G. Rosado,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 24,
issue 1-4
页码: 195-214
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908215592
出版商: Taylor & Francis Group
关键词: Ferroelectric films;tunable microwave components;microstripline configuration;characteristic impedance;effective dielectric constant;attenuation;SrTiO3;BaxSr1−xTiO3;LaAlO3;10–20 GHz
数据来源: Taylor
摘要:
The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film “flip-chip” technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tanδ, and thickness, will be presented for SrTiO3and BaxSr1−xTiO3ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented.
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