Electrical properties of the interface betweenBi4Ti3O12ferroelectric film andp-Si substrate have been studied by capacitance–voltage(C–V)characteristics. It is found that the interface barrier can be broken down temporally because of the charge injection from Si substrate into the ferroelectric thin film, and this charge injection behavior induces hump and valley structures in theC–Vcurves. It is also found that the polarization in theBi4Ti3O12film is aligned along a preferential direction from semiconductor to ferroelectric thin film, which is attributed to the ferroelectric/p-Si contact. ©1998 American Institute of Physics.