The Scanning Capacitance Microscope has been used to profile insulating, semiconducting and conducting surfaces with resolution down to 25 nanometers. In the case of semiconducting materials, it has been demonstrated that lateral dopant profiling can be achieved with 100 nanometer spatial resolution‐well beyond that which can be achieved by conventional techniques. Measurements on semiconductors indicate that the technique should be useful for device characterization. In this paper, we review the basis of Scanning Capacitance Microscopy and present some of the more recent results.