Growth and characterization of flash‐evaporated ferroelectric antimony sulphoiodide thin films
作者:
A. Mansingh,
T. Sudersena Rao,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 9
页码: 3530-3535
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335779
出版商: AIP
数据来源: AIP
摘要:
Ferroelectric thin films of antimony sulphoiodide (SbSI) have been grown by flash evaporation in the thickness range of 0.1–1.5 &mgr;m. Annealing the films in a sulphur atmosphere at 100 °C for 10–12 min improved their stoichiometry and crystallinity. Structural studies revealed that films deposited normal to the substrate have a tendency to grow with thecaxis oriented at 6° to the substrate. The refractive index and band gap estimated from the optical transmission curves for 1.0‐&mgr;m‐thick films were found to be 4 and 1.97 eV, respectively. The measured relative dielectric constant (&egr;’) for a 1.0‐&mgr;m thick film at 100 KHz, 300 K was ∼73. Reproducible ferroelectric‐to‐paraelectric phase transitions were observed for films thicker than 0.2 &mgr;m.
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