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Photoemission study of the ZnSe/GaAs (100) interface: Composition and band offset

 

作者: K. M. Colbow,   Y. Gao,   T. Tiedje,   J. R. Dahn,   W. Eberhardt,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1991）
卷期: Volume 9, issue 5  

页码: 2614-2617

 

ISSN:0734-2101

 

年代: 1991

 

DOI:10.1116/1.577214

 

出版商: American Vacuum Society

 

关键词: ZINC SELENIDES;GALLIUM ARSENIDES;PHOTOEMISSION;ANNEALING;VALENCE BANDS;CHEMICAL SHIFT;EPITAXIAL LAYERS;ENERGY−LEVEL DENSITY;INTERFACE STATES;ZnSe;GaAs

 

数据来源: AIP

 

摘要:

The interface between ZnSe and GaAs (100) has been studied as a function of annealing temperature by high‐resolution photoemission spectroscopy using synchrotron radiation. From an analysis of chemical shifts and relative intensities of the atomic core levels, we find an interfacial Ga2Se3layer forms with loss of Zn and As at the interface. The valence band offset between ZnSe and GaAs is found to be 1.25±0.07 eV, from photoemission measurements of the top of the valence band.

 

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