Charging of pattern features during plasma etching
作者:
J. C. Arnold,
H. H. Sawin,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 70,
issue 10
页码: 5314-5317
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.350241
出版商: AIP
数据来源: AIP
摘要:
The localized charging of a rectangular trench during the plasma etching of a perfectly insulating surface was modeled assuming an isotropic electron flux and monodirectional ion bombardment. The field set up by the localized charging acts to deflect arriving ions, modifying the ion flux densities within the feature, and thus, etching rates. Preliminary simulations indicate that this may be important in the shaping of etching profiles.
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