Ballistic electron emission spectroscopy of metals on GaP(110)
作者:
R. Ludeke,
M. Prietsch,
A. Samsavar,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1991)
卷期:
Volume 9,
issue 4
页码: 2342-2348
ISSN:1071-1023
年代: 1991
DOI:10.1116/1.585745
出版商: American Vacuum Society
关键词: METALS;LAYERS;GALLIUM PHOSPHIDES;N−TYPE CONDUCTORS;SCHOTTKY BARRIER DIODES;POTENTIAL BARRIER;ELECTRON EMISSION;BALLISTICS;MATHEMATICAL MODELS;TRANSPORT THEORY;MAGNESIUM;NICKEL;BISMUTH;COPPER;SILVER;Mg;Ni;Bi;Cu;Ag;Au
数据来源: AIP
摘要:
Ballistic electron emission spectroscopy (BEES), a technique based on the scanning tunneling microscope (STM), was used to measure Schottky barrier heights of metals on cleavedn‐type GaP(110). The threshold voltagesV0for current detection in the semiconductor were found to be uniform to within ±0.02 V over the sample surface for any given metal on GaP. A transport model for the currentIccrossing the barrier, that includes both nonclassical transmission across the metal–semiconductor interface and electron scattering in the metal, yieldsIc∝(V−V0)5/2near threshold. The value ofV0extracted from the data, which represents the Schottky barrier height, depends somewhat on the details of the transport model. Our best estimates of the Schottky barrier heights, within ±0.03 eV, are 1.07 (Mg), 1.11 (Ni), 1.14 (Bi), 1.25 (Cu), 1.31 (Ag), and 1.46 eV (Au).
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