Observation of quantum confined excited states of GaN nanocrystals
作者:
Valerie J. Leppert,
Christina J. Zhang,
Howard W. H. Lee,
Ian M. Kennedy,
Subhash H. Risbud,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 23
页码: 3035-3037
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121532
出版商: AIP
数据来源: AIP
摘要:
GaN nanocrystals with an average diameter of 4.5 nm±1.6 nm were synthesized by pulsed laser ablation of a gallium metal target in a nitrogen atmosphere. Transmission electron microscopy and selected area electron diffraction confirmed the hexagonal structure and size of the nanocrystals. Optical absorption and photoluminescence spectroscopy revealed quantum confined excited states in the nanocrystalline samples with features at 4.43 eV (280 nm) and 5.47 eV (227 nm). ©1998 American Institute of Physics.
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