Some unusual annealing properties of the radiation damage in lithium‐diffused silicon are discussed. These properties are (1) spontaneous room‐temperature recovery, (2) the effect of oxygen content in silicon on the recovery, (3) the effect of the defect concentration on the recovery, (4) high damage effect on the recovery, and (5) redegradation. A kinetic equation is formulated by introducing the time dependence of free lithium concentration in the system to the kinetic equation of the repairing of the damage. The results successfully describe all the properties listed above.