Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy
作者:
D. J. Olego,
M. Tamura,
Y. Okuno,
T. Kawano,
A. Hashimoto,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 71,
issue 9
页码: 4329-4332
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.350814
出版商: AIP
数据来源: AIP
摘要:
Heteroepitaxial InP layers were grown by metalorganic chemical vapor deposition on novel GaAs buffer layers on Si substrates. The GaAs buffers were prepared by molecular beam epitaxy and show a reduced threading dislocation density achieved by inserting one nanometer thick Si interlayers. The structural and optoelectronic properties of the heteroepitaxial InP layers, which were investigated by transmission electron microscopy, x‐ray diffraction, and photoluminescence spectroscopy, show improvements attributed to the optimized GaAs buffer layers.
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