Calculation of intrinsic carrier concentration in Hg1−xCdxTe
作者:
G. L. Hansen,
J. L. Schmit,
期刊:
Journal of Applied Physics
(AIP Available online 1983)
卷期:
Volume 54,
issue 3
页码: 1639-1640
ISSN:0021-8979
年代: 1983
DOI:10.1063/1.332153
出版商: AIP
数据来源: AIP
摘要:
Intrinsic carrier concentration in Hg1−xCdxTe is calculated as a function of temperature and composition using the Kane nonparabolic approximation for band structure and recent measurements of the heavy hole massmhand energy gapEg. An expression fitted to these calculations is:ni[5.585−3.820x+1.753(10−3)T−1.364(10−3)xT] ×(1014)E3/4gT3/2exp(−Eg/2kbT). The fit of this approximation is within 1% of the calculatednifor the rangeEg>0, 50<T<300 K andx<0.7. It is also within 15% of experimentalniobtained from Hall measurements.
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