Dislocations produced in Ge by high-temperature indentation have been studied using high-resolution transmission electron microscopy. An interesting defect has been observed which consists of a 1/6⟨411⟩ partial dislcation separated by an intrinsic stacking fault from a 1/6⟨121⟩ 30° partial. The unusual 1/6⟨411⟩ partial dislocation forms by the reaction of a perfect 1/6⟨110⟩ 60° and 1/6⟨211⟩ 90° partial dislocation belonging to different glide planes.