In situx‐ray diffraction study of the role of annealing ambient in epitaxial CoSi2growth from Co/Ti bilayers on Si(001)
作者:
T. I. Selinder,
D. J. Miller,
K. E. Gray,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 11
页码: 1597-1599
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114951
出版商: AIP
数据来源: AIP
摘要:
The reactions during annealing of a Co/Ti bilayer structure on Si(001) were studiedinsituto reveal the roles of the Ti interlayer and the annealing ambient on the formation of epitaxial CoSi2. We shown that an oxygen contaminant in the nitrogen annealing gas is needed to form a stable, Co–Ti–O (spinel) membrane at the metal/Si interface that limits diffusion and is crucial for the perfection of epitaxial CoSi2. Annealing in vacuum or otherwise inert environments led to polycrystalline CoSi2films and no spinel phase. ©1995 American Institute of Physics.
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