Reverse biased photoconductive detectors and switches with separate absorption and detection area
作者:
P. Riel,
E. Greger,
K. Reingruber,
M. Ennes,
P. Kiesel,
M. Kneissl,
G. H. Do¨hler,
G. Tra¨nkle,
G. Weimann,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 11
页码: 1367-1369
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113203
出版商: AIP
数据来源: AIP
摘要:
We report on reverse biased photoconductive detectors with novel design and improved high‐frequency performance. Taking advantage of the ‘‘giant ambipolar diffusion constant’’ which has been observed previously inn‐i‐p‐idoping superlattices very fast carrier transfer from the inner absorption area to the outer detection area is achieved. The combination of narrow contact spacings and smallRCand diffusion time constants results in very high gain‐bandwidth products (≳20 GHz) with adjustable 3 dB frequencies. ©1995 American Institute of Physics.
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