The localized state density distribution in the mobility gap of glow‐discharge amorphous silicon has been determined from capacitance‐voltage characteristics for metal/oxide/amorphous silicon (MOS) structures. This new method provides a smooth distribution of localized states throughout the mobility gap. The density of states increases from a minimum of the order of 1016cm−3 eV−1near midgap to more than 1018–1019cm−3 eV−1within 0.2 eV of the band edges.