We report the operation of strained‐layer InxGa1−xAs/GaAs 50‐ and 100‐period multiple quantum well optical modulators at wavelengths ranging from 1.02 to 1.07 &mgr;m. Structures were grown on GaAs substrates, as well as on strain relief InxGa1−xAs buffer layers. Devices show favorable electrical characteristics and absorption contrasts up to 57% at the exciton peak. Optical modulation of a Nd:YAG laser is demonstrated, via operation of self‐electro‐optic effect devices at 1.064 &mgr;m.