Selected‐area epitaxy of CdTe grown by chemical‐beam epitaxy and migration‐enhanced epitaxy was achieved at reduced temperatures (above 225 °C) on (001) GaAs substrates patterned with SiO2. CdTe single‐crystal growth was observed on the GaAs surface while no deposition was detected on the SiO2. Selected epitaxy was further demonstrated in reduced‐area patterns with dimensions suitable for the monolithic integration of infrared focal plane and processor arrays. Growth selectivity was confirmed by scanning Auger microscopy, scanning electron microscopy, reflection high‐energy electron diffraction, and x‐ray double‐crystal rocking curve analysis. A method is proposed to reduce the growth temperature to below 200 °C; a temperature appropriate for epitaxy of device‐quality HgCdTe.