Single-phasePrBa0.7Sr1.3Cu3O7thin films with the Sr dopant concentration exceeding the solid solubility limit were epitaxially grown on (001)SrTiO3and (001)LaAlO3substrates by pulsed laser deposition (PLD) method. The resistivity of the doped films grown onLaAlO3was significantly lower than that ofPrBa2Cu3O7.For most of the films grown onSrTiO3,the resistivity was higher than that ofPrBa2Cu3O7.The results were explained by considering the Sr-doping effect and lattice-mismatch-induced strain effect. This work shows the potential of PLD to grow single-phase films with the dopant concentration exceeding the solid solubility limit. ©1998 American Institute of Physics.