Metal-silicides are one of the most useful contact materials for the high speed Si LSI devices, since they have lower resistivities than the poly-Si electrodes. In fabrication of such LSI devices, the silicide electrodes are used as the self-aligned masks for localized ion implantation, because they are relatively stable up to the annealing tempera-tures of the implanted impurities. So, in order to recover the damages in thesilicide electrodes and to increase reliability of the electrodes, it is important to study annealing behavior of the radiation damages in the ion-implanted silicide films. The radiation damages in the silicides have been in-vestigated using epitaxial films grown on single crystalline Si.1–3It has been found that there is a pronounced difference on the damages between metal-rich silicides as Pd2Si and silicon-rich silicides as Nisi2. That is, it has been shown that Nisi, films become amorphous for higher doses than 3 × 1015Ar ions/cm2, while that Pd2Si films do not become amorphous but the amounts of damages saturate for higher doses than 1 × 10l5 Ar ions/cm2.1In this paper, we present the annealing behavior of the radiation damages in epitaxial Pd2Si and Nisi2films on Si by using the channeling technique.