Direct‐Current Measurement of the Hall Effect in Trigonal Selenium Single Crystal
作者:
J. Heleskivi,
T. Stubb,
T. Suntola,
期刊:
Journal of Applied Physics
(AIP Available online 1969)
卷期:
Volume 40,
issue 7
页码: 2923-2927
ISSN:0021-8979
年代: 1969
DOI:10.1063/1.1658102
出版商: AIP
数据来源: AIP
摘要:
The Hall effect in trigonal selenium single crystals has been measured by a dc method. The measurements give a carrier concentration of 0.5×1015cm−3at room temperature and 1015cm−3at 100°K. The conductivity is ofptype within the entire temperature range. By illumination with extrinsic light the carrier concentration has to a certain extent turned out to be independent of the intensity of light. The mobility calculated from a barrier model is about 260 cm2/V sec at room temperature in the direction of thecaxis. The value is considerably higher than earlier reported values.
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