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Electro‐optic properties near the absorption edge of GaAs/AlGaAs multiple‐quantum‐well waveguides

 

作者: Mark J. Bloemer,   Krishna Myneni,  

 

期刊: Journal of Applied Physics  (AIP Available online 1993)
卷期: Volume 74, issue 8  

页码: 4849-4859

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.354314

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Measurements are reported of the electro‐optic properties of multiple‐quantum‐wellp‐i‐ndiodes at wavelengths where the waveguide propagation losses are small, 55–110 meV below the exciton resonance. Electroabsorptive and electrorefractive properties were measured as a function of polarization and crystal propagation direction. The electroabsorption and electrorefraction data show that there is a wavelength bandwidth of ∼25 nm where the quadratic electro‐optic coefficient is large (1–7×10−15cm2/V2) and the magnitude of the electroabsorption is <0.5 dB/mm for applied fields of up to 1×105V/cm. Compact, high‐dynamic‐range interferometric modulators can be realized in this wavelength band.

 

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