In this letter, it is shown that micro-Raman spectroscopy allows easy, nondestructive determination of the C49 and C54 phase of titanium silicide with &mgr;m resolution within single structures with area dimensions down to 1×1&mgr;m2and along isolated line structures with widths down to 0.25 &mgr;m. The micro-Raman spectroscopy technique is used to study isolated 0.25–5-&mgr;m-wideTiSi2lines with thicknesses as small as 16 nm that are formed in both crystalline Si and polycrystalline Si. The phase mapping ability of the technique is demonstrated on several 80-&mgr;m-long, 0.35-&mgr;m-wideTiSi2lines that are part of four-terminal line resistance devices created using complementary metal–oxide–semiconductor processing. ©1997 American Institute of Physics.