The effects of joining pressure and deformation on the strength and microstructure of diffusion‐bonded SiC were examined using a hot‐press to apply varying amounts of interfacial pressure and a close‐fitting die to restrict deformation. SiC substrates were successfully diffusion bonded at 1950° and 2100°C. Joints which had uniform grain structure across the joint interface and bend strengths up to 300 MPa (44 ksi) were achieved. Pressing pressure was found to be a requirement for producing reasonable joint strength. It was also found that macroscopic deformation (>4% joint area expansion) is not necessary for effective diffusion bonding. Various methods for joining SiC are reviewed with regard to ease of processing, use limitations, and joint s