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Interaction of indium on Si surface in Si molecular beam epitaxy (MBE)

 

作者: H. T. Yang,   W. S. Berry,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 2  

页码: 206-208

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582782

 

出版商: American Vacuum Society

 

关键词: silicon;surface cleaning;indium;diffusion;desorption;sorptive properties;atom transport;molecular beam epitaxy;surface analysis;crystal defects;transmission electron microscopy;scanning electron microscopy;Si

 

数据来源: AIP

 

摘要:

To investigate the feasibility of using indium to replace Ga as an agent for silicon surface cleaning at lower substrate temperature in ultrahigh vacuum, we have examined the in‐diffusion of indium and the surface defects introduced into silicon for various indium desorption processes. For the dynamic desorption case, which simulated the actual cleaning procedure, no significant surface defects were identified, nor was there any indium at the near surface region of the silicon substrate.

 

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