Amorphous Phase in Palladium—Silicon Alloys
作者:
Pol Duwez,
R. H. Willens,
R. C. Crewdson,
期刊:
Journal of Applied Physics
(AIP Available online 1965)
卷期:
Volume 36,
issue 7
页码: 2267-2269
ISSN:0021-8979
年代: 1965
DOI:10.1063/1.1714461
出版商: AIP
数据来源: AIP
摘要:
By rapid cooling from the melt, an amorphous phase has been obtained in palladium—silicon alloys containing 15 to 23 at.% Si. This phase is stable at room temperature and crystallization cannot be detected after one month at 250°C. With rates of heating greater than 20°C/min, rapid crystallization takes place at 400°C, with a heat release of approximately 1000 cal/mole. The electrical resistivity of an alloy containing 17 at.% Si at room temperature is 2.6 times that of the equilibrium alloy. The resistivity decreases linearly with decreasing temperature and is about 95% of the room‐temperature value at 2°K. Various factors involved in the retention of amorphous phases in rapidly quenched liquid alloys are discussed.
点击下载:
PDF
(216KB)
返 回