Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures
作者:
U. Egger,
M. Schultz,
P. Werner,
O. Breitenstein,
T. Y. Tan,
U. Go¨sele,
R. Franzheld,
M. Uematsu,
H. Ito,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 9
页码: 6056-6061
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364453
出版商: AIP
数据来源: AIP
摘要:
Interdiffusion coefficients on the group V sublattice of GaAs were determined in GaAsP/GaAs and GaAsSb/GaAs superlattices. Strained GaAs0.86P0.14/GaAs, GaAs0.8P0.2/GaAs0.975P0.025and GaAs0.98Sb0.02/GaAs superlattices were annealed between 850 °C and 1100 °C under different arsenic vapor pressures. The diffusion coefficient was measured by secondary ion mass spectroscopy and cathodoluminescence spectroscopy. The interdiffusion coefficient was higher under arsenic-rich conditions than under gallium-rich conditions, pointing to an interstitial-substitutional type of diffusion mechanism. ©1997 American Institute of Physics.
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